
	Part Number	Hot Search : RC1313 67BZI HC404 P1602ACL KA2242 100LB H220M 74LS74A
	Product Description
	Full Text Search

HY27USXXX - (HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存

HY27USXXX_144462.PDF Datasheet

Part No.

HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27US16121M HY27SS08121M

Description

(HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存

File Size

731.68K / 43 Page

Maker

Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: HY27US08121M

Maker: HY

Pack: TSOP

Stock: Reserved

Unit price for :

50: $8.31

100: $7.89

1000: $7.48

Email: oulindz@gmail.com

Contact us

Homepage

http://www.hynix.com/eng/

Download

[ HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27US16121M HY27SS08121M Datasheet PDF Downlaod from IC-ON-LINE.CN

]
[ HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27US16121M HY27SS08121M Datasheet PDF Downlaod from Datasheet.HK

]
[HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27US16121M HY27SS08121M Datasheet PDF Downlaod from Maxim4U.com

] :-)

[ View it Online ] [ Search more for HY27USXXX ]

[ Price & Availability of HY27USXXX by FindChips.com ]

Full text search : (HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存

Related Part Number

PART	Description	Maker
HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27	(HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存	Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2	Unbuffered DDR SDRAM DIMM 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 32Mx64\|2.5V\|M/K/H/L\|x8\|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 \| 2.5V的\| /升\| x8 \| DDR SDRAM内存- 256MB的无缓冲DIMM	Hynix Semiconductor http://
K4J52324QC K4J52324QC-BJ14 K4J52324QC-BC14 K4J5232	512Mbit GDDR3 SDRAM	SAMSUNG[Samsung semiconductor]
K4J52324QC K4J52324QC-BC14 K4J52324QC-BC16 K4J5232	512Mbit GDDR3 SDRAM	Samsung Electronic
K4S510732B-TC1L K4S510732B-TC1H K4S510732B-TL1L K4	Stacked 512Mbit SDRAM 堆积512兆内	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
HYB25D512400BF-5 HYB25D512800BF-6 HYB25D512160BE-5	512Mbit Double Data Rate SDRAM 512MB的双倍数据速率SDRAM	Infineon Technologies A... Infineon Technologies AG
HYB25D512400BC-5 HYB25D512160BC-5 HYB25D512400BT-6	512Mbit Double Data Rate (DDR) Components	Infineon
H55S5162DFR-60M H55S5162DFR-75M H55S5162DFR-A3M	512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O	Hynix Semiconductor
K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C	8M x 16Bit x 4 Banks Synchronous DRAM Data Sheet DDP 512Mbit SDRAM 12兆内	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
HY27US08121A HY27US16121A HY27SS08121A HY27SS16121	512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 3.3V PROM, 30 ns, PBGA63	Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	Numonyx B.V
TH58512DC	A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)	Toshiba Corporation

Related keyword From Full Text Search System

HY27USXXX Series	HY27USXXX resistor	HY27USXXX Flash	HY27USXXX external rom	HY27USXXX Ultra
HY27USXXX 查ic资料	HY27USXXX data sheet ic	HY27USXXX npn	HY27USXXX circuit board	HY27USXXX phase